DocumentCode :
1602490
Title :
Distributed feedback laser simulations based on GaInNAs-GaAs single-quantum-well
Author :
Nadir, Mohammed
Author_Institution :
Inst. of Phys., Tampere Univ. of Technol., Finland
fYear :
2004
Firstpage :
75
Lastpage :
76
Abstract :
First and second order DFB-lasers are simulated. For the second order DFB, thin layer theory is applied, i.e. the grating layer is thinner than the wavelength. The theory is based on coupled wave equations and incorporates the Green function method for the calculation of radiating wave. The DFB laser consists of a single quantum well (6-nm Ga0.66In0.34N0.016As0.984/GaAs) with 150-nm undoped GaAs waveguide layer on both sides of quantum well and an additional grating layer of first or second order. Further, p/n-doped Al0.3Ga0.7As cladding layers of 1.5-μm are added. These two DFB lasers have been studied by simulating optical power versus current, delta density and surface wave intensity. Due to increased photon density in the cavity caused by high reflectivity, the spectrum gets broadened in an inhomogeneous manner and causes multimode amplification rendering a spatial hole burning-like effect. The optical distribution and wave intensity are also simulated at different cross-sections. The optical gain is evidently the key feature for this material and its effect on the real index and spectrum is also computed for different N compositions in GaxIn1-xN1-yAsy/GaAs. The spectral features at different threshold current levels and reflectivity are simulated. An attempt is also made to compute the temporal properties of the structure.
Keywords :
Green´s function methods; III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; optical hole burning; optical waveguides; p-n junctions; quantum well lasers; reflectivity; semiconductor device models; semiconductor quantum wells; spectral line broadening; Al0.3Ga0.7As; Ga0.66In0.34N0.016As0.984-GaAs; GaInNAs-GaAs single-quantum-well; Green function method; coupled wave equations; delta density; distributed feedback laser; first-order DFB lasers; grating layer; laser simulations; multimode amplification; optical distribution; optical gain; p/n-doped Al0.3Ga0.7As cladding; photon density; reflectivity; second order DFB-lasers; spatial hole burning-like effect; spectral broadening; surface wave intensity; thin layer theory; threshold current levels; undoped GaAs waveguide layer; Distributed feedback devices; Gallium arsenide; Gratings; Laser feedback; Laser theory; Optical feedback; Optical surface waves; Quantum well lasers; Stimulated emission; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2004. NUSOD '04. Proceedings of the 4th International Conference on
Print_ISBN :
0-7803-8530-6
Type :
conf
DOI :
10.1109/NUSOD.2004.1345161
Filename :
1345161
Link To Document :
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