Title :
Numerical simulation of selected semiconductor devices
Author :
Palankovski, Vassil ; Selberherr, Siegfried
Author_Institution :
Inst. fur Microelectron., Technische Univ. Wien, Austria
Abstract :
We present a review of industrial heterostructure devices, based on SiGe/Si and III-V compound semiconductors, analyzed by means of numerical simulation. Critical modeling issues are addressed. Results from 2D hydrodynamic analyses of heterojunction bipolar transistors (HBTs) and field-effect transistors (FETs) are presented, and are in good agreement with measured data.
Keywords :
Ge-Si alloys; III-V semiconductors; field effect transistors; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; semiconductor device models; semiconductor materials; 2D hydrodynamic analysis; FET; GaAs; HBT; HEMT; InP; SiGe-Si; compound semiconductors; field-effect transistors; heterojunction bipolar transistors; heterostructure devices; semiconductor device numerical simulation; Degradation; Gallium arsenide; Germanium silicon alloys; HEMTs; Heterojunction bipolar transistors; Indium phosphide; MODFETs; Numerical simulation; Semiconductor devices; Silicon germanium;
Conference_Titel :
Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2004. 27th International Spring Seminar on
Print_ISBN :
0-7803-8422-9
DOI :
10.1109/ISSE.2004.1490390
