DocumentCode
1602517
Title
Modeling of multilayer structures based on graded-band-gap semiconductors
Author
Sokolovskii, Bogdan
Author_Institution
Dept. of Electron., Ivan Franko Nat. Univ., Lviv, Ukraine
fYear
2004
Firstpage
77
Abstract
The study presents results of modeling of energy band gap diagram and current transfer in symmetric multilayer structures based on graded-band-gap semiconductors which are of interest for various optoelectronic applications. The case of homogeneously doped structures with constant gradients of the energy band gap and electron affinity has been investigated by means of analytical and numerical calculations.
Keywords
carrier mobility; electron affinity; energy gap; multilayers; semiconductor process modelling; current transfer; electron affinity; energy band gap; energy band gap diagram; graded-band-gap semiconductors; homogeneously doped structures; multilayer structures; optoelectronic applications; symmetric multilayer structures; Charge carrier density; Doping profiles; Electrons; Elementary particle vacuum; Linear approximation; Nonhomogeneous media; Photonic band gap; Semiconductor process modeling; Shape;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices, 2004. NUSOD '04. Proceedings of the 4th International Conference on
Print_ISBN
0-7803-8530-6
Type
conf
DOI
10.1109/NUSOD.2004.1345163
Filename
1345163
Link To Document