Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells

Author

Garcia-Hemansanz, R. ; Garcia-Hemme, E. ; Pastor, Dominique ; del Prado, A. ; Martil, I. ; Gonzalez-Diaz, G. ; Olea, J. ; Ferrer, F.J.

Author_Institution

Dipt. Fis. Aplic. III, Univ. Complutense de Madrid, Madrid, Spain

fYear

2013

Firstpage

337

Lastpage

340

Abstract

Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence with the deposition parameters. For films deposited at high pressure (1 mbar), composition measurements show a critical dependence of the purity of the films with the RF power. Films manufactured with RF-power above 80W exhibit good properties for future application, similar to the films deposited by CVD (Chemical Vapor Deposition) for hydrogenated amorphous silicon.

Keywords

amorphous semiconductors; chemical vapour deposition; elemental semiconductors; energy gap; semiconductor thin films; silicon; solar cells; sputter deposition; CVD; HIT solar cells; RF power; Si; absorption coefficient; band-gap; chemical vapor deposition; composition measurements; high pressure sputtering; hydrogenated amorphous silicon thin films; optical properties; Hydrogen; Optical films; Plasmas; Radio frequency; Silicon; Sputtering; HIT cell; absorption bands; composition; high pressure sputtering; hydrogenated amorphous silicon; intermediate band;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2013 Spanish Conference on

Conference_Location

Valladolid

Print_ISBN

978-1-4673-4666-5

Electronic_ISBN

978-1-4673-4667-2

Type

conf

DOI

10.1109/CDE.2013.6481411

Filename

6481411