Title :
Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells
Author :
Garcia-Hemansanz, R. ; Garcia-Hemme, E. ; Pastor, Dominique ; del Prado, A. ; Martil, I. ; Gonzalez-Diaz, G. ; Olea, J. ; Ferrer, F.J.
Author_Institution :
Dipt. Fis. Aplic. III, Univ. Complutense de Madrid, Madrid, Spain
Abstract :
Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence with the deposition parameters. For films deposited at high pressure (1 mbar), composition measurements show a critical dependence of the purity of the films with the RF power. Films manufactured with RF-power above 80W exhibit good properties for future application, similar to the films deposited by CVD (Chemical Vapor Deposition) for hydrogenated amorphous silicon.
Keywords :
amorphous semiconductors; chemical vapour deposition; elemental semiconductors; energy gap; semiconductor thin films; silicon; solar cells; sputter deposition; CVD; HIT solar cells; RF power; Si; absorption coefficient; band-gap; chemical vapor deposition; composition measurements; high pressure sputtering; hydrogenated amorphous silicon thin films; optical properties; Hydrogen; Optical films; Plasmas; Radio frequency; Silicon; Sputtering; HIT cell; absorption bands; composition; high pressure sputtering; hydrogenated amorphous silicon; intermediate band;
Conference_Titel :
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location :
Valladolid
Print_ISBN :
978-1-4673-4666-5
Electronic_ISBN :
978-1-4673-4667-2
DOI :
10.1109/CDE.2013.6481411
