Title :
Polarized emission from InGaN light-emitting diode with self-assembled opal coating
Author :
Zhang, Q. ; Li, K.H. ; Choi, H.W.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
Abstract :
The polarization behaviors of light emission from InGaN light-emitting diodes (LEDs) with nanosphere opal coatings have been studied. The close-packed nanosphere opal films are self-assembled with 220 nm polystyrene nanospheres onto the LEDs. Optical transmission properties of the TE and TM polarized light have been measured as a function of detection angle; an integrated p/s ratio of 2.16 has been obtained at the detection angle of 70°. The polarization of light propagating through the opal film is strongly related to the photonic bandgap of the three-dimensional photonic crystal and is also dependent upon the angle of incidence. Theoretical calculations by the transfer matrix method are found to be consistent with the measured results.
Keywords :
III-V semiconductors; coatings; gallium compounds; indium compounds; light emitting diodes; nanostructured materials; photonic band gap; photonic crystals; polymers; self-assembly; InGaN; TE polarized light; TM polarized light; light emission; light emitting diode; nanosphere opal coating; opal film; optical transmission; photonic bandgap; polarized emission; polystyrene nanosphere; self-assembled opal coating; size 220 nm; three-dimensional photonic crystal; transfer matrix method; Coatings; Facsimile; Optical polarization; Photonics;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-4673-2198-3
DOI :
10.1109/NANO.2012.6322138
