DocumentCode :
1602999
Title :
A method to determine the injected real power into an IC Pin in case of a conducted immunity EMC test
Author :
Frick, M. ; Weigel, R. ; Eidher, R.
Author_Institution :
Eng. Electromagn. Compatibility, Robert Bosch GmbH, Reutlingen, Germany
fYear :
2011
Firstpage :
850
Lastpage :
854
Abstract :
The direct power injection (DPI) measurement method is an internationally accepted technique to verify the robustness of an integrated circuit (IC) against an injected RF signal. The requirements of this measurement method respecting the setup is fixed in the international standard IEC 62132-4 [1]. In this paper a method is presented which allows to determine the real power injection into the IC pin by considering the influence of the required test printed circuit board (PCB). To apply this method only the transmitted and reflected RF power, the voltage standing wave ratio (VSWR), which are already locked during the DPI test, and the scattering parameters (S-parameters) of the PCB injection path are needed. How to use the available measurement results and how to determine the required S-parameters of the PCB injection path is described in this paper.
Keywords :
S-parameters; electromagnetic compatibility; integrated circuit testing; printed circuits; IC Pin; S-parameters; conducted immunity EMC test; direct power injection measurement method; injected real power; international standard IEC 62132-4; test printed circuit board; voltage standing wave ratio; Electromagnetic compatibility; Equations; Integrated circuits; Mathematical model; Power measurement; Radio frequency; Scattering parameters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electromagnetic Compatibility (EMC), 2011 IEEE International Symposium on
Conference_Location :
Long Beach, CA, USA
ISSN :
2158-110X
Print_ISBN :
978-1-4577-0812-1
Type :
conf
DOI :
10.1109/ISEMC.2011.6038427
Filename :
6038427
Link To Document :
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