• DocumentCode
    1603215
  • Title

    Blue eight emission from ion beam synthesized semiconductor nanoclusters in SiO2 films

  • Author

    Van Borany, J. ; Rebohle, L. ; Skorupa, W. ; Heinig, K.-H.

  • Author_Institution
    Inst. of Ion Beam Phys. & Mater. Res., Forschungszentrum Rossendorf, Dresden, Germany
  • Volume
    1
  • fYear
    1999
  • fDate
    6/21/1905 12:00:00 AM
  • Firstpage
    62
  • Abstract
    Due to quantum confinement and surface effects semiconductor nanoparticles exhibit properties, which considerably differ to that of the bulk material. The topic of light emission from ion beam synthesized semiconductor nanoclusters is focused on recent success in extracting strong violet/blue photo- and electroluminescence from Si- or Ge- implanted SiO2 layers on Si
  • Keywords
    electroluminescence; elemental semiconductors; germanium; insulating thin films; ion implantation; nanostructured materials; photoluminescence; silicon; silicon compounds; SiO2 film; SiO2:Ge; SiO2:Si; blue light emission; electroluminescence; ion beam synthesis; photoluminescence; quantum confinement; semiconductor nanocluster; surface effect; violet light emission; Atomic layer deposition; Impurities; Ion beams; Ion implantation; Nanoparticles; Optical fibers; Physics; Potential well; Semiconductor films; Semiconductor materials;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industrial Electronics Society, 1999. IECON '99 Proceedings. The 25th Annual Conference of the IEEE
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-5735-3
  • Type

    conf

  • DOI
    10.1109/IECON.1999.822172
  • Filename
    822172
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1603215