Carrier injection in p-i-M sub-micron size structures on diamond made by ion implantation

p-i-M (p-type/intrinsic diamond/metal) vertical diodes with submicron-size i-layers have been fabricated on diamond by ion implantation for the first time. The I-V curves have been measured on devices made on natural, synthetic single crystals and on polycrystalline CVD diamond film. The measurement results demonstrated that this technique is a promising way to fabricate electronic devices with the active i-layer on highly defective diamonds which can not be used for a planar technology. The dependence of the diode´s characteristics upon the metal creates additional opportunity in designing the electronic devices