SPICE modeling of MOSFETs in deep submicron

Author

Angelov, George ; Hristov, Marln

Author_Institution

ECAD Lab., Tech. Univ. of Sofia, Bulgaria

Volume

2

fYear

2004

Firstpage

257

Abstract

As the mainstream MOS technology is scaling into nanometer sizes, the development of physical and predictive models for circuit simulation that cover geometry, bias, temperature, DC, AC, RF, and noise characteristics becomes a major goal. The paper addresses the scaling, trends and their limiting factors and follows through the evolution of the three MOSFET model generations of SPICE: from the Berkeley Levels 1, 2, 3 to the latest BSIM3v3, BSIM4, MM11, EKV, and SP2001. MOSFET models are examined, emphasizing device physics and mathematical techniques for numerical calculation.

Keywords

MOSFET; SPICE; circuit simulation; nanoelectronics; numerical analysis; semiconductor device models; AC characteristics; BSIM3v3 MOSFET model; BSIM4 MOSFET model; Berkeley Level models; DC characteristics; EKV MOSFET model; MM11 MOSFET model; MOS technology scaling; MOSFET; MOSFET model generations; RF characteristics; SP2001 MOSFET model; bias characteristics; circuit geometry; circuit simulation; deep submicron SPICE modeling; device physics; mathematical techniques; nanometer sizes; noise characteristics; numerical calculation; physical models; predictive models; temperature characteristics; Circuit noise; Circuit simulation; Geometry; MOSFETs; Mathematical model; Physics; Predictive models; Radio frequency; SPICE; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2004. 27th International Spring Seminar on

Print_ISBN

0-7803-8422-9

Type

conf

DOI

10.1109/ISSE.2004.1490430

Filename

1490430