Title :
Integration of PIN diodes with slot embedded patch elements for active reflectarray antenna design
Author :
Inam, M. ; Ismail, M.Y.
Author_Institution :
Wireless & Radio Sci. Centre (WARAS), Univ. Tun Hussein Onn Malaysia, Batu Pahat, Malaysia
Abstract :
This work provides an investigation on the slot embedded patch configurations to be used as elements for the active reflectarray design. Rectangular slots have been introduced in the centre of the rectangular patch elements designed in the X-band frequency range. Waveguide scattering parameter measurements has been performed for the proposed slotted elements and a close agreement has been shown between the simulated and measured results in terms of resonant frequency, reflection loss and reflection phase. The use of PIN diodes integrated with the slotted patch elements has been successfully demonstrated for the design of active reflectarrays. It has been shown that frequency tunability from 9.64 GHz to 8.88 GHz can be achieved by using different states of PIN diode with 0.5W slotted patch element. Moreover the individual lumped component properties of PIN diodes have been investigated thoroughly for the optimum design of active reflectarrays.
Keywords :
S-parameters; active antenna arrays; microstrip antenna arrays; p-i-n diodes; rectangular waveguides; reflectarray antennas; slot antenna arrays; PIN diodes; X-band frequency range; active reflectarray antenna design; frequency 9.64 GHz to 8.88 GHz; power 0.5 W; rectangular patch elements; rectangular slots; reflection loss; reflection phase; resonant frequency; slot embedded patch elements; waveguide scattering parameter measurements; Capacitance; Finite element analysis; Loss measurement; PIN photodiodes; Reflection; Reflector antennas; Resonant frequency; PIN diodes; active reflectarray antenna; frequency tunability; scattering parameter measurements;
Conference_Titel :
Telecommunication Technologies (ISTT), 2012 International Symposium on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-4784-6
DOI :
10.1109/ISTT.2012.6481581