Title :
Study of the Crystallization Process of Cu2O Samples from Polycrystalline Copper Plates
Author :
Solache-Carranco, H. ; Juarez-Diaz, G. ; Esparza-Garcia, A. ; Briseo-Garcia, M. ; Galván-Arellano, M. ; Martínez-Juárez, J. ; Romero-Paredes, G.R. ; Pea-Sierra, R.
Author_Institution :
Seccion de Electron. del Estado Solido, Mexico
Abstract :
An experimental study of the crystallization process of Cu2O samples from polycrystalline copper plates is presented. The crystallization process consists of two stages: In the first stage polycrystalline copper plates were wholly oxidized at 1020 degC in air, in the second stage the Cu2O samples were crystallized through an annealing process at temperatures in the range of 1040-1070 degC, by several hours to promote the increase in size of the crystallites constituting the initial Cu2O sample. The Cu2O samples were characterized by X-ray diffraction and photoluminescence measurements. With the processing conditions used in the annealing process, Cu2O samples with single crystalline areas of more than 2 mm in diameter are observed. On the basis of the experimental results, a model for the crystallization of Cu2O is presented.
Keywords :
X-ray diffraction; annealing; copper compounds; crystallisation; crystallites; oxidation; photoluminescence; Cu2O; X-ray diffraction; annealing; crystallites; crystallization; oxidation; photoluminescence; polycrystalline copper plates; temperature 1020 degC; temperature 1040 degC to 1070 degC; Annealing; Atmosphere; Copper; Crystalline materials; Crystallization; Photoluminescence; Semiconductor materials; Stability; Temperature distribution; X-ray diffraction; Cu2O; Photoluminescence; X-ray diffraction; crystallization; semiconductors;
Conference_Titel :
Electrical and Electronics Engineering, 2007. ICEEE 2007. 4th International Conference on
Conference_Location :
Mexico City
Print_ISBN :
978-1-4244-1165-8
Electronic_ISBN :
978-1-4244-1166-5
DOI :
10.1109/ICEEE.2007.4345036
