Control of residual stress of polysilicon thin films by heavy doping in surface micromachining

Author

Orpana, M. ; Korhonen, A.O.

Author_Institution

Tech. Res. Centre of Finland, Espoo, Finland

fYear

1991

Firstpage

957

Lastpage

960

Abstract

Control of residual stress of polysilicon thin films for use in surface micromachining was experimentally studied. It was found that stress can be controlled by fairly heavy doping and subsequent annealing. Polysilicon films with lower than 50 ppm tensile and -50 ppm compressive strain were fabricated as measured from micromachined test structures. Very low tensile strains of less than 100 ppm were obtained with As/sup +/ implantation doses on the order of 1-3*10/sup 16/ cm/sup -2/ and annealing temperatures of 1050 degrees C. Strains as low as 15-30 ppm were achieved. The problem of sticking of structures to the substrate after wet etching of sacrificial oxide was observed and circumvented.<>

Keywords

annealing; electric sensing devices; elemental semiconductors; etching; heavily doped semiconductors; internal stresses; ion implantation; semiconductor thin films; silicon; stress control; surface treatment; 1050 C; CMOS compatibility; Si:B; Si:P; SiAs; annealing; elemental semiconductor; heavy doping; ion implantation; low tensile strains; polycrystalline Si thin films; residual stress control; sacrificial oxide; sticking of structures; surface micromachining; wet etching; Annealing; Compressive stress; Doping; Micromachining; Residual stresses; Strain measurement; Stress control; Tensile strain; Tensile stress; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-87942-585-7

Type

conf

DOI

10.1109/SENSOR.1991.149048

Filename

149048