Title :
ALD Ta2O5 and Hf-doped Ta2O5 for BEOL compatible MIM
Author :
Triyoso, D.H. ; Weinreich, W. ; Seidell, K. ; Nolan, M.G. ; Polakowski, P. ; Utess, D. ; Ohsiek, S. ; Dittmar, K. ; Weisheit, M. ; Licbau, M. ; Fox, R.
Author_Institution :
GLOBALFOUNDRIES, Malta, NY, USA
Abstract :
Decoupling MIM capacitors are typically implemented to reduce power supply noise. In this work we reported characterization of Atomic Layer Deposited (ALD) Ta2O5 and Hf-doped Ta2O5 high-k MIM capacitors. We investigated the impact of precursor choice and HfO2 addition on material, electrical and reliability characteristics of MIM capacitors. We demonstrated MIM capacitors with high capacitance density, low leakage and excellent reliability which are also suitable for BEOL integration.
Keywords :
MIM devices; atomic layer deposition; capacitors; high-k dielectric thin films; reliability; tantalum compounds; ALD; BEOL compatible MIM capacitor; Ta2O5:Hf; atomic layer deposition; decoupling MIM capacitors; electrical characteristics; high capacitance density; high-k MIM capacitors; material characteristics; power supply noise reduction; reliability characteristics; Films; Hafnium compounds; High K dielectric materials; Impurities; MIM capacitors; Temperature measurement; BEOL; MIM; capacitors; high-k;
Conference_Titel :
IC Design & Technology (ICICDT), 2014 IEEE International Conference on
Conference_Location :
Austin, TX
DOI :
10.1109/ICICDT.2014.6838595
