Title :
Mechanical and structural characterization of in-situ phosphorus doped plasma enhanced alpha silicon films
Author :
Flowers, D.L. ; Ristic, L. ; Hughes, H.G.
Author_Institution :
Motorola Inc., Phoenix, AZ, USA
Abstract :
The mechanical and structural analysis of 350 degrees C deposited, plasma-enhanced and annealed alpha silicon films was performed. Very high, electrically active doping levels of phosphorus in silicon were achieved at even 750 degrees C anneal. The reason for such high activity is shown by TEM and electron diffraction analysis to be the formation of large polycrystallites when plasma-enhanced alpha silicon is annealed. This is in opposition to the small grain size with a large volume of grain boundaries when polysilicon is deposited at 650 degrees C and annealed further, later. Cantilever beams made out of alpha polysilicon were demonstrated, although it seems that the polysilicon is more suitable for micromechanical structures.<>
Keywords :
annealing; crystallites; electron diffraction examination of materials; elemental semiconductors; grain size; heavily doped semiconductors; micromechanical devices; phosphorus; plasma CVD coatings; semiconductor thin films; silicon; transmission electron microscope examination of materials; 350 C; TEM; alpha Si:P films; annealing temperature; cantilever beams; deposition temperature; electrically active doping levels; electron diffraction analysis; elemental semiconductor; grain boundaries; in-situ doped; large polycrystallites; mechanical analysis; micromechanical structures; plasma enhanced CVD; small grain size; structural characterization; Annealing; Diffraction; Doping; Electrons; Grain boundaries; Grain size; Performance analysis; Plasmas; Semiconductor films; Silicon;
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
DOI :
10.1109/SENSOR.1991.149049
