Title :
Analysis of the Threshold Voltage BSIM-Model for a Short Channel PD-SOI DTMOS
Author :
Jiménez-P, A. ; De la Hidalga-W, F.J.
Author_Institution :
Inst. Nacional de Astrofisica Opt. y Electron. (INAOE), Puebla
Abstract :
The threshold voltage is a fundamental parameter necessary to predict the correct behavior of circuits based on Dynamic Threshold MOSFETs. In this work, we analyzed the short channel effects on this parameter. PISCES simulations of short and long channel MOSFET´s based on a 0.2 mum PD-SOI technology were used to investigate the validity of the BSIMSOI model under substrate forward bias. The simulation results showed that the dependence of the threshold voltage on the substrate forward bias can differ importantly from the BSIMSOI model for short channel devices, but it could agree with BSIMSOI model for long channel devices. Under substrate forward bias, an improved definition for the minimum surface potential must be used in order to eliminate the differences between the BSIMSOI model and PISCES simulations for short channel devices.
Keywords :
MOSFET; silicon-on-insulator; PISCES simulations; dynamic threshold MOSFET; dynamic threshold voltage MOS transistor; short channel PD-SOI DTMOS; short channel effects; silicon on insulator; substrate forward bias; threshold voltage BSIM-model; Circuit simulation; Digital circuits; Equations; Immune system; Logic circuits; Logic gates; MOSFET circuits; Predictive models; Silicon on insulator technology; Threshold voltage; BSIMSOI; DTMOS; SOI; Short Channel Effects; Threshold Voltage;
Conference_Titel :
Electrical and Electronics Engineering, 2007. ICEEE 2007. 4th International Conference on
Conference_Location :
Mexico City
Print_ISBN :
978-1-4244-1166-5
Electronic_ISBN :
978-1-4244-1166-5
DOI :
10.1109/ICEEE.2007.4345045
