DocumentCode
1604558
Title
Voltage Source Circuit Based on CMOS Floating-Gate Memory
Author
de la Cruz Alejo, J. ; Ponce, Victor Ponce ; Castafieda, F.G. ; Cadenas, José A Moreno
Author_Institution
CINVESTAV-IPN, Mexico City
fYear
2007
Firstpage
400
Lastpage
403
Abstract
This paper present a new circuit designed to support high accuracy reference voltages over a nearly full range of the power supply. To achieve this, the circuit is designed to be efficient utilizing a CMOS floating gate memory fabricated in 1.2 mum CMOS process. The memory stores voltages as charge on the floating gate of a pMOS transistor. The output voltages of the circuit are easily programming by simply modifying the value of the floating gate through the tunnelling and injection hot electrons mechanisms. Also, the circuit can drive a resistive load with the advantage of reduced both silicon area and dissipated power on chip.
Keywords
CMOS memory circuits; MOSFET; hot carriers; tunnelling; CMOS floating-gate memory; high accuracy reference voltages; hot electrons mechanism; pMOS transistor; voltage source circuit; CMOS memory circuits; CMOS process; Drives; Electrons; MOSFETs; Nonvolatile memory; Power supplies; Silicon; Tunneling; Voltage; CMOS; floating gate; injection; tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Electronics Engineering, 2007. ICEEE 2007. 4th International Conference on
Conference_Location
Mexico City
Print_ISBN
978-1-4244-1166-5
Electronic_ISBN
978-1-4244-1166-5
Type
conf
DOI
10.1109/ICEEE.2007.4345050
Filename
4345050
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