Title :
Voltage Source Circuit Based on CMOS Floating-Gate Memory
Author :
de la Cruz Alejo, J. ; Ponce, Victor Ponce ; Castafieda, F.G. ; Cadenas, José A Moreno
Author_Institution :
CINVESTAV-IPN, Mexico City
Abstract :
This paper present a new circuit designed to support high accuracy reference voltages over a nearly full range of the power supply. To achieve this, the circuit is designed to be efficient utilizing a CMOS floating gate memory fabricated in 1.2 mum CMOS process. The memory stores voltages as charge on the floating gate of a pMOS transistor. The output voltages of the circuit are easily programming by simply modifying the value of the floating gate through the tunnelling and injection hot electrons mechanisms. Also, the circuit can drive a resistive load with the advantage of reduced both silicon area and dissipated power on chip.
Keywords :
CMOS memory circuits; MOSFET; hot carriers; tunnelling; CMOS floating-gate memory; high accuracy reference voltages; hot electrons mechanism; pMOS transistor; voltage source circuit; CMOS memory circuits; CMOS process; Drives; Electrons; MOSFETs; Nonvolatile memory; Power supplies; Silicon; Tunneling; Voltage; CMOS; floating gate; injection; tunneling;
Conference_Titel :
Electrical and Electronics Engineering, 2007. ICEEE 2007. 4th International Conference on
Conference_Location :
Mexico City
Print_ISBN :
978-1-4244-1166-5
Electronic_ISBN :
978-1-4244-1166-5
DOI :
10.1109/ICEEE.2007.4345050