• DocumentCode
    1604558
  • Title

    Voltage Source Circuit Based on CMOS Floating-Gate Memory

  • Author

    de la Cruz Alejo, J. ; Ponce, Victor Ponce ; Castafieda, F.G. ; Cadenas, José A Moreno

  • Author_Institution
    CINVESTAV-IPN, Mexico City
  • fYear
    2007
  • Firstpage
    400
  • Lastpage
    403
  • Abstract
    This paper present a new circuit designed to support high accuracy reference voltages over a nearly full range of the power supply. To achieve this, the circuit is designed to be efficient utilizing a CMOS floating gate memory fabricated in 1.2 mum CMOS process. The memory stores voltages as charge on the floating gate of a pMOS transistor. The output voltages of the circuit are easily programming by simply modifying the value of the floating gate through the tunnelling and injection hot electrons mechanisms. Also, the circuit can drive a resistive load with the advantage of reduced both silicon area and dissipated power on chip.
  • Keywords
    CMOS memory circuits; MOSFET; hot carriers; tunnelling; CMOS floating-gate memory; high accuracy reference voltages; hot electrons mechanism; pMOS transistor; voltage source circuit; CMOS memory circuits; CMOS process; Drives; Electrons; MOSFETs; Nonvolatile memory; Power supplies; Silicon; Tunneling; Voltage; CMOS; floating gate; injection; tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical and Electronics Engineering, 2007. ICEEE 2007. 4th International Conference on
  • Conference_Location
    Mexico City
  • Print_ISBN
    978-1-4244-1166-5
  • Electronic_ISBN
    978-1-4244-1166-5
  • Type

    conf

  • DOI
    10.1109/ICEEE.2007.4345050
  • Filename
    4345050