Title :
Integrated 32 ?? 32 pyroelectric ir sensor array in nmos/jfet circuitry using highly (001) oriented pzt thin films on epitaxial y-al2o3/si substrates
Author :
Kawazu, N. ; Kikuchi, K. ; Akai, D. ; Sawada, K. ; Ishida, M.
Author_Institution :
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Hibariga-oka, Tempaku-cho, 441-8580, JAPAN
Abstract :
Integrated 32 ?? 32 pyroelectric IR sensor array in nMOS/JFET circuitry using highly (001) oriented Pb(Zr0.4, Ti0.6)O3 (PZT) thin films on epitaxial y-Al2O3/Si substrates has been fabricated on the one chip. The sensor array utilizes a sol-gel deposited PZT(001) thin film as a pyroelectric material, an n-JFET as a low noise detection device, and a micromachined membrane supported by four beams as a thermal isolation structure on epitaxial Pt(001)/y-Al2O3(001)/Si(001) substrates.
Keywords :
Infrared sensors; JFET integrated circuits; MOS devices; Pyroelectricity; Semiconductor thin films; Sensor arrays; Substrates; Thermal sensors; Thin film circuits; Thin film sensors;
Conference_Titel :
Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
Conference_Location :
Santa Re, NM, USA
Print_ISBN :
978-1-4244-2744-4
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2008.4693727
