Title :
Electrical properties of Pb(Zr,Ti)O3/CeO2/Si MFIS structure fabricated by chemical mechanical polishing (CMP) damascene process
Author :
Kim, Nam-Hoon ; Ko, Pil-Ju ; Lee, Woo-Sun
Author_Institution :
School of Information and Communication Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon 440-746, Korea
Abstract :
Metal-ferroelectric-insulator-silicon field-effect-transistors (MFISFETs) of Au/PZT/CeO2/Si were fabricated by the novel method of chemical mechanical polishing (CMP) damascene process. The vertical sidewall without the surface and/or plasma damage could be easily fabricated by it. The typical ferroelectric characteristics were sucessfully obtained although the remanent polarization value was low.
Keywords :
Chemical processes; Etching; Ferroelectric materials; Gold; Magnetic field induced strain; Mechanical factors; Plasma applications; Plasma chemistry; Plasma devices; Silicon compounds;
Conference_Titel :
Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
Conference_Location :
Santa Re, NM, USA
Print_ISBN :
978-1-4244-2744-4
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2008.4693729
