Title :
Polishing damages to electrical properties of BLT thin film capacitors fabricated by damascene process of chemical mechanical polishing
Author :
Kim, Nam-Hoon ; Jung, Pan-Gum ; Ko, PH-Ju ; Lee, Woo-Sun
Author_Institution :
School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Korea
Abstract :
BLT thin film capacitor was fabricated by the novel method of chemical mechanical polishing (CMP) process. The electrical characteristics including P-V and I-V of BLT capacitor were damaged by the polishing pressure which is one of the main factors to improve the CMP performance for BLT thin film; therefore, the lower polishing pressure must be selected for the good electrical characteristics although the removal rate was lower.
Keywords :
Capacitors; Chemical processes; Ferroelectric films; Ferroelectric materials; Leakage current; Mechanical factors; Plasma temperature; Polarization; Random access memory; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
Conference_Location :
Santa Re, NM, USA
Print_ISBN :
978-1-4244-2744-4
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2008.4693730
