DocumentCode
1604662
Title
Fabrication of Cu2 ZnSnS4 thin film by sulfurization of stacked solution-based precursors with different copper sources
Author
Kao, Chia-Yu ; Shen, Pin-Chun ; Ku, Chun-Wei ; Lan, Shiang ; Lin, Ming-Shiun ; Lin, Ching-Fuh
Author_Institution
Grad. Inst. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear
2012
Firstpage
1
Lastpage
4
Abstract
In this work, a novel process to fabricate copper zinc tin sulfide (Cu2ZnSnS4, CZTS) thin films under non-vacuum system was reported. CZTS thin film was prepared successfully by sulfurizing stacked CZT sol-gel layers and thioacetamide (C2H5NS, TAA) layers. The thin films presenting different characteristics due to different copper sources were observed. The X-ray diffraction (XRD) and Raman shift peaks showed that copper from copper (II) acetate (CuOAc) attributed to CZTS while copper from copper (II) chloride attributed to Cu2S. Field emission scanning electron microscopy also showed different morphologies.
Keywords
II-VI semiconductors; X-ray diffraction; copper alloys; field emission electron microscopy; scanning electron microscopy; semiconductor thin films; sol-gel processing; solar cells; tin compounds; wide band gap semiconductors; zinc compounds; CZTS thin film; Cu2ZnSnS4; Raman shift; X-ray diffraction; XRD; copper sources; copper zinc tin sulfide thin films; field emission scanning electron microscopy; nonvacuum system; sol-gel layers; stacked solution-based precursors; thin film solar cells; thioacetamide layers; Copper; Energy measurement; Glass; Powders; X-ray scattering; CZTS; Raman analysis; XRD; sol-gel; solution;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
Conference_Location
Birmingham
ISSN
1944-9399
Print_ISBN
978-1-4673-2198-3
Type
conf
DOI
10.1109/NANO.2012.6322204
Filename
6322204
Link To Document