Simulating InP-based composite channel p-HEMTs with ultrashort gates for THz applications

Author

Akis, R. ; Soligo, R. ; Marino, F.A. ; Ferry, David K. ; Goodnick, S.M. ; Saraniti, M.

Author_Institution

Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA

fYear

2012

Firstpage

1

Lastpage

5

Abstract

Ultrashort gate length pseudomorphic highelectron-mobility transistors (p-HEMTs) based on an InP substrate and featuring a InAs/In_0.053Ga_0.47As composite channel have been modeled using a full-band Cellular Monte Carlo simulator. The affects of pair generation by impact ionization are included and we have incorporated a model to allow carriers to tunnel into and out of the channel. Using a gate length scaling analysis, we can obtain a theoretical upper limit for the cut-off frequency, f_T, which we find to be 1.7 THz for this specific type of structure. We also examine factors that may be preventing actual devices from achieving such high frequency operation.

Keywords

III-V semiconductors; Monte Carlo methods; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; terahertz wave devices; tunnelling; InAs-In_0.053Ga_0.47As; InP; InP-based composite channel pHEMT simulation; composite channel; cut-off frequency; device prevention; frequency 1.7 THz; full-band cellular Monte Carlo simulator; gate length scaling analysis; high frequency operation; impact ionization; terahertz applications; ultrashort gate length pseudomorphic high electron mobility transistors; Analytical models; HEMTs; Indium phosphide; Logic gates; MODFETs; Monte Carlo methods; THz transistors; effective gate length; pseudomorphic HEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on

Conference_Location

Birmingham

ISSN

1944-9399

Print_ISBN

978-1-4673-2198-3

Type

conf

DOI

10.1109/NANO.2012.6322205

Filename

6322205