DocumentCode :
1604744
Title :
Electrical characterization of 1D SnO2 nanowires
Author :
Izydorczyk, Weronika ; Izydorczyk, Jacek ; Mazurkiewicz, Janusz ; Magnuski, Miroslaw ; Uljanow, Jerzy
Author_Institution :
Inst. of Electron., Silesian Univ. of Technol., Gliwice, Poland
fYear :
2012
Firstpage :
1
Lastpage :
6
Abstract :
In this study, a method to identify the impedance of the sample composed of SnO2 nanowires (NWs) has been presented. The studied sensor structures were based on one-dimensional (1D) SnO2 NWs grown by thermal deposition on silicon substrate. The topography of SnO2 NWs was investigated by means of scanning electron microscopy (SEM). The results of qualitative and quantitative analysis in selected microregion have been presented. Furthermore, the electrical properties of the NWs were measured. The base of the measurement comprised impedance spectroscopy, Padé data approximation restrained by passivity condition. This study demonstrates that it is possible to separate the characteristic parameters for various transport phenomena in the NW.
Keywords :
approximation theory; electric impedance; electric sensing devices; nanofabrication; nanosensors; nanowires; passivation; scanning electron microscopy; semiconductor materials; tin compounds; 1D nanowires; NW topography; Pade data approximation; SEM; Si; SnO2; electrical characterization; electrical properties; impedance spectroscopy; microregion selection; passivity condition; scanning electron microscopy; sensor structures; thermal deposition; transport phenomena; Approximation algorithms; Approximation methods; Energy measurement; Reflection; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
Conference_Location :
Birmingham
ISSN :
1944-9399
Print_ISBN :
978-1-4673-2198-3
Type :
conf
DOI :
10.1109/NANO.2012.6322207
Filename :
6322207
Link To Document :
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