Title :
Piezoresistivity effects in N-MOSFET devices
Author :
Wang, Z.Z. ; Suski, J. ; Collard, D. ; Dubois, E.
Author_Institution :
ISEN, Lille, France
Abstract :
The theory of the piezoresistive effect in quantized n-type inversion layers is developed including various effects depending on the transverse and lateral electric fields inside N-MOS transistors, the hot-electron effect, intravalley and intervalley scattering effects, and different saturation velocity effects. The coefficient Pi /sub 44/ is given in an analytical form. A mixed 2D/3D piezoresistive effect model is introduced in the process/device simulation package IMPACT. The piezoresistive effect in N-MOS transistors is simulated making use of IMPACT, and comparison of the simulations with experiments is satisfactory.<>
Keywords :
hot carriers; insulated gate field effect transistors; inversion layers; piezoresistance; semiconductor device models; N-MOSFET devices; hot-electron effect; intervalley scattering effects; intravalley scattering effects; lateral electric fields; mixed 2D/3D piezoresistive effect model; piezoresistive effect; process/device simulation package IMPACT; quantized n-type inversion layers; quantum limit approximation; saturation velocity effects; transverse electric fields; Carrier confinement; Computational modeling; Effective mass; Energy states; MOSFET circuits; Particle scattering; Piezoresistance; Piezoresistive devices; Semiconductor device modeling; Tensile stress;
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
DOI :
10.1109/SENSOR.1991.149069
