DocumentCode
1605220
Title
An enabling material design to promote highly tunable, low loss, performance consistent BST thin films for tunable device applications
Author
Cole, M.W. ; Ngo, E. ; Hirsch, S. ; Zhong, S. ; Alpay, S.P.
Author_Institution
U.S. Army Research Laboratory, Aberdeen Proving Ground, Maryland 21005, USA
Volume
2
fYear
2008
Firstpage
1
Lastpage
1
Abstract
In this work we demonstrate that a compositionally stratified Ba1??xSrxTiO3 (BST) thin film design (BST60/40-BST75/25-BST90/10) combined with optimized metal-organic solution deposition (MOSD) film fabrication and post-deposition annealing process protocols results in low loss, highly tunable and temperature stable thin film heterostructures. The experimental data demonstrates that the compositionally stratified BST thin film heterostructure has a small-signal dielectric permittivity of 360 with a dissipation factor of 0.012 and a dielectric tunability of 65% at 444 kV/cm. These material properties exhibited minimal dispersion as a function of temperature ranging from 90 to ??10 ??C. Thus, our results suggest that this compositionally stratified material design is an excellent candidate for tunable devices which require both enhanced dielectric response and performance consistency in harsh operational temperature regimes.
Keywords
Annealing; Binary search trees; Design optimization; Dielectric thin films; Fabrication; Performance loss; Protocols; Sputtering; Temperature; Thin film devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
Conference_Location
Santa Re, NM, USA
ISSN
1099-4734
Print_ISBN
978-1-4244-2744-4
Electronic_ISBN
1099-4734
Type
conf
DOI
10.1109/ISAF.2008.4693755
Filename
4693755
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