• DocumentCode
    1605220
  • Title

    An enabling material design to promote highly tunable, low loss, performance consistent BST thin films for tunable device applications

  • Author

    Cole, M.W. ; Ngo, E. ; Hirsch, S. ; Zhong, S. ; Alpay, S.P.

  • Author_Institution
    U.S. Army Research Laboratory, Aberdeen Proving Ground, Maryland 21005, USA
  • Volume
    2
  • fYear
    2008
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    In this work we demonstrate that a compositionally stratified Ba1??xSrxTiO3 (BST) thin film design (BST60/40-BST75/25-BST90/10) combined with optimized metal-organic solution deposition (MOSD) film fabrication and post-deposition annealing process protocols results in low loss, highly tunable and temperature stable thin film heterostructures. The experimental data demonstrates that the compositionally stratified BST thin film heterostructure has a small-signal dielectric permittivity of 360 with a dissipation factor of 0.012 and a dielectric tunability of 65% at 444 kV/cm. These material properties exhibited minimal dispersion as a function of temperature ranging from 90 to ??10 ??C. Thus, our results suggest that this compositionally stratified material design is an excellent candidate for tunable devices which require both enhanced dielectric response and performance consistency in harsh operational temperature regimes.
  • Keywords
    Annealing; Binary search trees; Design optimization; Dielectric thin films; Fabrication; Performance loss; Protocols; Sputtering; Temperature; Thin film devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
  • Conference_Location
    Santa Re, NM, USA
  • ISSN
    1099-4734
  • Print_ISBN
    978-1-4244-2744-4
  • Electronic_ISBN
    1099-4734
  • Type

    conf

  • DOI
    10.1109/ISAF.2008.4693755
  • Filename
    4693755