Title :
A 3.5-GHz SiGe 0.35µm HBT flip-chip assembled on ceramics integrated passive device Doherty power amplifier for SiP integration
Author :
Kuo, Che-Chung ; Lin, Po-An ; Kuo, Jing-Lin ; Lu, Hsin-Chia ; Hsin, Yue-Ming ; Wang, Huei
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A 3.5-GHz SiGe 0.35μm HBT Doherty power amplifier (DPA) on ceramics integrated passive device (CIPD) using flip-chip assembled package for system in package (SiP) integration is reported in this paper. The unit cell power amplifier in the DPA demonstrates a saturated output power of 28dBm and 35% PAE at PSAT. When the complete DPA is operated in the quasi-balanced mode, it demonstrates a PSAT of 30.5dBm (PAE = 31%), and a PAE of 8% at OP1dB. When the complete DPA is operated in the quasi-Doherty mode, it has a PSAT of 30dBm with the same PAE, and an improved PAE of 27% at OP1dB. The excellent performance is mainly due to the high Q passive elements of CIPD. To the author´s knowledge, this is the first demonstration of a watt-level PA using flip-chip assembled on CIPD process with good performance.
Keywords :
flip-chip devices; heterojunction bipolar transistors; power amplifiers; silicon compounds; system-in-package; SiGe HBT flip-chip; SiP integration; ceramics integrated passive device Doherty power amplifier; flip-chip assembled package; frequency 3.5 GHz; high Q passive elements; size 0.35 mum; system in package integration; unit cell power amplifier; Flip chip; Heterojunction bipolar transistors; Impedance; Microwave amplifiers; Power amplifiers; Power generation; Silicon germanium; Doherty amplifier; Flip-chip; IPD; PAE; power amplifier;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2011 Asia-Pacific
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4577-2034-5
