New Design Approach to minimise IMD Asymmetry and IM3 products in Microwave FETs

Author

Colantonio, P. ; Giannini, F. ; Limiti, E. ; Nanni, A.

Author_Institution

Univ. of Rome Tor Vergata, Rome

fYear

2006

Firstpage

13

Lastpage

17

Abstract

The minimisation of asymmetry between the lower and upper side band intermodulation products is discussed in the first part of this contribution using a Volterra series analysis. From the inferred relationships, not only the base band but also the harmonic device terminations effects were analysed, establishing new conditions to minimise the IMD asymmetry. Under these conditions and following the Volterra approach, also the IM₃ products were minimized through a suitable second harmonic load selection as verified by nonlinear simulations on a HEMT device model. This approach allows to avoid complex linearization schemes in the base band frequencies obtaining similar results and simpler design.

Keywords

Volterra series; intermodulation; microwave field effect transistors; Volterra series analysis; base band frequencies; harmonic device terminations effects; microwave FET; second harmonic load selection; side band intermodulation products; Circuit simulation; FETs; Frequency; HEMTs; Harmonic analysis; Microwave devices; Minimization; Nonlinear distortion; Pulse measurements; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves, Radar & Wireless Communications, 2006. MIKON 2006. International Conference on

Conference_Location

Krakow

Print_ISBN

978-83-906662-7-3

Type

conf

DOI

10.1109/MIKON.2006.4345094

Filename

4345094