Strain tunability of spontaneous polarization and enhanced ferroelectric properties in epitaxial (001) BiFeO3 thin films

Author

Jang, H.W. ; Baek, S.H. ; Ortiz, D. ; Folkman, C.M. ; Das, R.R. ; Chu, Y.H. ; Zhang, J.X. ; Vaithyanathan, V. ; Choudhury, S. ; Chen, Y.B. ; Pan, X.Q. ; Schlom, D.G. ; Chen, L.Q. ; Ramesh, R. ; Eom, C.B.

Author_Institution

Department of Materials Science and Engineering, University of Wisconsin, Madison, 53706, USA

Volume

2

fYear

2008

Firstpage

1

Lastpage

3

Abstract

We report the strain dependence of remanent polarization and coercive field of epitaxial (001)p BiFeO3 films. Our measurements reveal that the large spontanoues polarization of BiFeO3 is indeed intrinsic, the remanent polarization of (001)p BiFeO3 thin films has a strong strain dependence, even stronger than (001) PbTiO3 films, and the coercive field of BiFeO3 films is also tunable. In addition, the low coercive filed and the reduced leakage current in (001)p BiFeO3 membranes allows us to achieve a fatigue-free switching behavior to 1010 cycles. This experimental result strongly suggests that epitaxial (001)p BiFeO3 thin films are very promising materials for non-volatile memories and magnetoelectric devices.

Keywords

Biomembranes; Capacitive sensors; Ferroelectric films; Ferroelectric materials; Leakage current; Magnetic field measurement; Magnetic materials; Polarization; Strain measurement; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the

Conference_Location

Santa Re, NM, USA

ISSN

1099-4734

Print_ISBN

978-1-4244-2744-4

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2008.4693773

Filename

4693773