A temperature variation compensated 60-GHz low-noise amplifier in 90-nm CMOS technology

Author

Shin, Shih-Chieh ; Leung, Matthew Chung-Hin ; Hsiao, Sen-Wen

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2011

Firstpage

211

Lastpage

214

Abstract

The paper presents a RF/analog co-design methodology of designing a CMOS millimeter-wave (mm-wave) low-noise amplifier (LNA) with temperature-compensation biasing scheme. A 60-GHz LNA is designed and fabricated in a standard 90-nm bulk CMOS process. A switchable temperature-compensation bias circuitry, which allows the LNA to be tested by biased with the temperature-compensated biasing circuitry or with external voltage supply, is integrated in the LNA chip. This experiment proves that the proposed biasing scheme can significantly reduce the gain variation under different operating temperatures.

Keywords

CMOS integrated circuits; compensation; low noise amplifiers; millimetre wave amplifiers; radiofrequency integrated circuits; CMOS millimeter-wave low-noise amplifier; LNA chip; RF-analog codesign methodology; external voltage supply; frequency 60 GHz; gain variation; size 90 nm; switchable temperature-compensation bias circuitry; temperature variation; CMOS integrated circuits; CMOS technology; Gain; Temperature measurement; Transceivers; Transistors; Voltage measurement; 60 GHz; CMOS; low-noise amplifier; millimeter wave; temperature compensation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2011 Asia-Pacific

Conference_Location

Melbourne, VIC

Print_ISBN

978-1-4577-2034-5

Type

conf

Filename

6173723