Abstract :
The following topics are dealt with: nonvolatile memory; memory subsystem evolution; MLC NAND flash device; floating gate NAND flash memory; embedded flash memory applications; multitimes-programmable floating-gate logic nonvolatile memories; EEPROM replacement in system on chip; embedded page flash; low field resistance drift for phase change memory simulations; long-cycled phase change memory cell; multimegabit phase change memory arrays reliability analysis; spin-transfer torque RAM; silicon nanocrystal split gate technology optimization; erase SONOS technology; NVSRAM; FinFET BE-SONOS NAND flash; TANOS NAND flash performance; TANOS charge trapping devices; charge trapping storage memory; 90 nm ultra-scaled SONOS FinFlash; and ultra-low power single poly logic NVM.
Keywords :
MOSFET; NAND circuits; SRAM chips; embedded systems; flash memories; integrated circuit design; integrated circuit reliability; integrated circuit technology; nanoelectronics; phase change materials; system-on-chip; EEPROM replacement; FinFET BE-SONOS NAND flash; MLC NAND flash device; NVSRAM; TANOS NAND flash performance; TANOS charge trapping devices; charge trapping storage memory; embedded flash memory applications; embedded page flash; erase SONOS technology; floating gate NAND flash memory; long-cycled phase change memory cell; low field resistance drift; memory subsystem evolution; multimegabit phase change memory arrays; nonvolatile memory; phase change memory simulations; programmable floating-gate logic NVM; reliability analysis; silicon nanocrystal split gate technology optimization; size 90 nm; spin-transfer torque RAM; system on chip; ultra-low power single poly logic NVM; ultra-scaled SONOS FinFlash;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2008 and 2008 International Conference on Memory Technology and Design. NVSMW/ICMTD 2008. Joint
Conference_Location :
Opio
Print_ISBN :
978-1-4244-1546-5
DOI :
10.1109/NVSMW.2008.1
