Compact highly integrated X-band power amplifier using commercially available discrete GaN FETs

Author

Campbell, Charles F. ; Poulton, Matthew

Author_Institution

Defense & Aerosp. Bus. Unit, TriQuint Semicond., Richardson, TX, USA

fYear

2011

Firstpage

243

Lastpage

246

Abstract

This paper describes the design and characterization of a highly integrated X-band power amplifier that utilizes commercially available discrete GaN transistors. The compact design integrates all of the RF matching and bias circuitry on to e_r=36 circuit boards, one for the input and one for the output. This includes the DC blocks, RF bypasses and RF chokes. Dimensions for the complete single stage power amplifier are 9.8 × 8.6 mm². Measured results for the GaN power amplifier under pulsed bias conditions demonstrate up to 66W output power with associated gain and power added efficiency of 8.3dB and 45% respectively.

Keywords

III-V semiconductors; MMIC power amplifiers; field effect MMIC; field effect analogue integrated circuits; gallium compounds; inductors; integrated circuit design; wide band gap semiconductors; DC blocks; GaN; RF bypass; RF choke; RF matching; amplifier gain; bias circuitry; circuit boards; compact highly integrated X-band power amplifier design; discrete FET; frequency 8 GHz to 12 GHz; power added efficiency; single stage power amplifier; FETs; Gain; Gallium nitride; Power amplifiers; Power generation; Radio frequency; Gallium Nitride; X-band; discrete FET; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2011 Asia-Pacific

Conference_Location

Melbourne, VIC

Print_ISBN

978-1-4577-2034-5

Type

conf

Filename

6173731