A small signal intrinsic equivalent circuit model for Cylindrical/Surrounded gate MOSFET for microwave frequency applications

Author

Ghosh, Pujarini ; Haldar, Subhasis ; Gupta, R.S. ; Gupta, Mridula

Author_Institution

Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India

fYear

2011

Firstpage

247

Lastpage

250

Abstract

An intrinsic small signal equivalent circuit of Cylindrical/Surrounded gate MOSFET is proposed. Admittance parameters of the device are extracted from the circuit analysis and intrinsic circuit elements are presented in terms of real and imaginary parts of the admittance parameters. S parameters are then evaluated and justified with the simulated data extracted from 3D device simulation. Y parameters are evaluated and compared with Y parameters of Nanowire MOSFET.

Keywords

MOSFET; S-parameters; circuit simulation; electric admittance; equivalent circuits; microwave field effect transistors; nanowires; network analysis; 3D device simulation; Nanowire MOSFET; S parameters; Y parameters; admittance parameters; circuit analysis; cylindrical-surrounded gate MOSFET; intrinsic circuit elements; microwave frequency applications; simulated data extraction; small signal intrinsic equivalent circuit model; Analytical models; Equivalent circuits; Integrated circuit modeling; Logic gates; MOSFET circuits; Microwave theory and techniques; Scattering parameters; Cylindrical/Surrounded (CGT/SGT); S-parameters; Short channel effects (SCEs); Small Signal Equivalent Circuit; Y-parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2011 Asia-Pacific

Conference_Location

Melbourne, VIC

Print_ISBN

978-1-4577-2034-5

Type

conf

Filename

6173732