Title :
A small signal intrinsic equivalent circuit model for Cylindrical/Surrounded gate MOSFET for microwave frequency applications
Author :
Ghosh, Pujarini ; Haldar, Subhasis ; Gupta, R.S. ; Gupta, Mridula
Author_Institution :
Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India
Abstract :
An intrinsic small signal equivalent circuit of Cylindrical/Surrounded gate MOSFET is proposed. Admittance parameters of the device are extracted from the circuit analysis and intrinsic circuit elements are presented in terms of real and imaginary parts of the admittance parameters. S parameters are then evaluated and justified with the simulated data extracted from 3D device simulation. Y parameters are evaluated and compared with Y parameters of Nanowire MOSFET.
Keywords :
MOSFET; S-parameters; circuit simulation; electric admittance; equivalent circuits; microwave field effect transistors; nanowires; network analysis; 3D device simulation; Nanowire MOSFET; S parameters; Y parameters; admittance parameters; circuit analysis; cylindrical-surrounded gate MOSFET; intrinsic circuit elements; microwave frequency applications; simulated data extraction; small signal intrinsic equivalent circuit model; Analytical models; Equivalent circuits; Integrated circuit modeling; Logic gates; MOSFET circuits; Microwave theory and techniques; Scattering parameters; Cylindrical/Surrounded (CGT/SGT); S-parameters; Short channel effects (SCEs); Small Signal Equivalent Circuit; Y-parameters;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2011 Asia-Pacific
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4577-2034-5
