Title :
A V-band VCO using ƒT-doubling technique in 0.18-µm CMOS
Author :
Kuo, Yen-Hung ; Tsai, Jeng-Han ; Huang, Tian-Wei ; Wang, Huei
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A low supply voltage V-band voltage-controlled oscillator (VCO) using fT-doubling technique is presented in this paper. The proposed VCO is fabricated in 0.18-μm CMOS technology. The proposed VCO adopts the fT-doubling technique to eliminate the gate-to-source capacitance of cross-coupled pair of VCO. The oscillation frequency of VCO can be increased due to the parasitic capacitance is eliminated. The measured results show that the proposed VCO have tuning range of 0.74 GHz from 58.09-to-58.83 GHz. The proposed VCO consumes 4 mW dc power from 1.2 V supply voltage.
Keywords :
CMOS analogue integrated circuits; millimetre wave integrated circuits; millimetre wave oscillators; voltage-controlled oscillators; CMOS technology; V-band VCO; cross-coupled pair; fT-doubling technique; frequency 0.74 GHz; frequency 58.09 GHz to 58.83 GHz; gate-to-source capacitance elimination; low supply voltage voltage-controlled oscillator; oscillation frequency; parasitic capacitance; power 4 mW; size 0.18 mum; voltage 1.2 V; CMOS integrated circuits; CMOS technology; Parasitic capacitance; Resonant frequency; Topology; Voltage-controlled oscillators; ƒT-doubler; CMOS; VCO;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2011 Asia-Pacific
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4577-2034-5
