A V-band VCO using ƒT-doubling technique in 0.18-µm CMOS

Author

Kuo, Yen-Hung ; Tsai, Jeng-Han ; Huang, Tian-Wei ; Wang, Huei

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2011

Firstpage

251

Lastpage

254

Abstract

A low supply voltage V-band voltage-controlled oscillator (VCO) using f_T-doubling technique is presented in this paper. The proposed VCO is fabricated in 0.18-μm CMOS technology. The proposed VCO adopts the f_T-doubling technique to eliminate the gate-to-source capacitance of cross-coupled pair of VCO. The oscillation frequency of VCO can be increased due to the parasitic capacitance is eliminated. The measured results show that the proposed VCO have tuning range of 0.74 GHz from 58.09-to-58.83 GHz. The proposed VCO consumes 4 mW dc power from 1.2 V supply voltage.

Keywords

CMOS analogue integrated circuits; millimetre wave integrated circuits; millimetre wave oscillators; voltage-controlled oscillators; CMOS technology; V-band VCO; cross-coupled pair; f_T-doubling technique; frequency 0.74 GHz; frequency 58.09 GHz to 58.83 GHz; gate-to-source capacitance elimination; low supply voltage voltage-controlled oscillator; oscillation frequency; parasitic capacitance; power 4 mW; size 0.18 mum; voltage 1.2 V; CMOS integrated circuits; CMOS technology; Parasitic capacitance; Resonant frequency; Topology; Voltage-controlled oscillators; ƒT-doubler; CMOS; VCO;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2011 Asia-Pacific

Conference_Location

Melbourne, VIC

Print_ISBN

978-1-4577-2034-5

Type

conf

Filename

6173733