Title : 
Custom Fabricated High-Q Analog Dual-Gap RF MEMS Varactors
         
        
            Author : 
McFeetors, G. ; Okoniewski, M.
         
        
        
        
        
            Abstract : 
An RF MEMS capacitor design, fabrication and measurement is described. The capacitor´s dual gap height architecture allows for continuous electrostatic tuning with low resistive loss and a large tuning range. Two voltage sources are used to reach the full tuning potential of the device. Measurements indicate a capacitance tuning range of 6.2:1 with a quality factor over 50 at 30 GHz for 310 fF.
         
        
            Keywords : 
Q-factor; circuit tuning; micromechanical devices; varactors; RF MEMS capacitor design; RF MEMS varactors; capacitance tuning; continuous electrostatic tuning; dual gap height architecture; quality factor; resistive loss; tuning range; voltage sources; Bridge circuits; Capacitance; Capacitors; Conductors; Electrodes; Electrostatics; Micromechanical devices; Radiofrequency microelectromechanical systems; Varactors; Voltage;
         
        
        
        
            Conference_Titel : 
Microwaves, Radar & Wireless Communications, 2006. MIKON 2006. International Conference on
         
        
            Conference_Location : 
Krakow
         
        
            Print_ISBN : 
978-83-906662-7-3
         
        
        
            DOI : 
10.1109/MIKON.2006.4345127