DocumentCode :
1606367
Title :
Custom Fabricated High-Q Analog Dual-Gap RF MEMS Varactors
Author :
McFeetors, G. ; Okoniewski, M.
fYear :
2006
Firstpage :
155
Lastpage :
158
Abstract :
An RF MEMS capacitor design, fabrication and measurement is described. The capacitor´s dual gap height architecture allows for continuous electrostatic tuning with low resistive loss and a large tuning range. Two voltage sources are used to reach the full tuning potential of the device. Measurements indicate a capacitance tuning range of 6.2:1 with a quality factor over 50 at 30 GHz for 310 fF.
Keywords :
Q-factor; circuit tuning; micromechanical devices; varactors; RF MEMS capacitor design; RF MEMS varactors; capacitance tuning; continuous electrostatic tuning; dual gap height architecture; quality factor; resistive loss; tuning range; voltage sources; Bridge circuits; Capacitance; Capacitors; Conductors; Electrodes; Electrostatics; Micromechanical devices; Radiofrequency microelectromechanical systems; Varactors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwaves, Radar & Wireless Communications, 2006. MIKON 2006. International Conference on
Conference_Location :
Krakow
Print_ISBN :
978-83-906662-7-3
Type :
conf
DOI :
10.1109/MIKON.2006.4345127
Filename :
4345127
Link To Document :
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