Title :
A low power high gain CMOS LNA for UWB receivers
Author :
Hsu, Meng-Ting ; Lin, Yu-Hsien
Author_Institution :
Dept. & Inst. of Electron. Eng., Nat. Yunlin Univ. of Sci. & Technol., Yunlin, Taiwan
Abstract :
A low-power low-noise amplifier (LNA) utilizing resistive inverter configuration feedback amplifier to achieve the broadband input matching purposes, and used of self-forward-body-bias (SFBB) technique to further increase the gain of the whole frequency band and suppress the noise. By using the SFBB technique, it reduces supply voltage as well as saves additional bias circuit. This UWB LNA is implemented by TSMC 0.18μm CMOS technology. The minimum noise figure is 4.8 dB. The amplifier provides maximum gain (S21) of 17.8 dB while drawing 9.67mW from 1.2-V supply. This chip area is 1.274 × 0.771 mm2.
Keywords :
feedback amplifiers; field effect MMIC; impedance matching; low noise amplifiers; microwave amplifiers; radio receivers; UWB receiver; gain 17.8 dB; input matching; low power high gain CMOS LNA; low power low noise amplifier; noise figure 4.8 dB; power 9.67 mW; resistive inverter configuration feedback amplifier; self forward body bias technique; size 0.18 mum; voltage 1.2 V; CMOS integrated circuits; CMOS technology; Gain; Inverters; Loss measurement; Wideband; low noise amplifier (LNA); resistive-feedback inverter; self-forward-body-bias(SFBB); ultra-wideband (UWB);
Conference_Titel :
Microwave Conference Proceedings (APMC), 2011 Asia-Pacific
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4577-2034-5
