Solar Blind MSM-Photodetectors Based on AlxGa1-xN/GaN Heterostructures Grown by MOCVD

Author

Averine, S.V. ; Kuznetzov, P.I. ; Zhitov, V.A. ; Alkeev, N.V. ; Lyubchenko, V.E.

Author_Institution

Inst. of Radio Eng. & Electron. Russian Acad. of Sci., Fryazino

fYear

2006

Firstpage

185

Lastpage

188

Abstract

The MOCVD technology of semiconductor heterostructures for ultraviolet photodetectors was developed. Solar blind AlGaN/GaN MSM photodetectors were fabricated and investigated. Directly on the MSM-diode we have measured a Schottky barrier height of 1.1 eV for Ni and 1.4 eV for Mo contacts on AlGaN. Effect of different buffer layers on the detector performances has been demonstrated. Detectors exhibit low dark currents and high sensitivity within the range of 250 -290 nm. Effect of high optical excitation level on detector performance is discussed.

Keywords

MOCVD; Schottky barriers; aluminium compounds; gallium compounds; metal-semiconductor-metal structures; photodetectors; wide band gap semiconductors; MOCVD; Schottky barrier; buffer layers; semiconductor heterostructures; solar blind MSM-photodetectors; ultraviolet photodetectors; Aluminum gallium nitride; Buffer layers; Dark current; Detectors; Gallium nitride; MOCVD; Optical buffering; Optical sensors; Photodetectors; Schottky barriers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves, Radar & Wireless Communications, 2006. MIKON 2006. International Conference on

Conference_Location

Krakow

Print_ISBN

978-83-906662-7-3

Type

conf

DOI

10.1109/MIKON.2006.4345135

Filename

4345135