Ramgen: a dual port static RAM generator

Author

Silvano, Cristina ; Sada, Giancarlo ; Populin, Laura

Author_Institution

Bull HN Italia, Pregnana, Italy

fYear

1992

Firstpage

509

Lastpage

512

Abstract

An automatic dual port static RAM (DPSRAM) generator based on a process-independent design methodology for double metal CMOS technology is described. An innovative architecture, using modular structures and cutoff transistors, has been designed to maintain the same performance independent of the array size, and to minimize the basic cell area. The use of the process-independent approach allows for an automatic mapping into different target CMOS technologies including submicron processes. Two DPSRAM blocks of 512 words by 8 b, included in a 100K-transistor cell-based design have been diffused and tested successfully

Keywords

CMOS integrated circuits; SRAM chips; multiport networks; 100K-transistor cell-based design; Ramgen; array size; automatic mapping; basic cell area; cutoff transistors; double metal CMOS technology; dual port static RAM generator; modular structures; process-independent design methodology; submicron processes; Application specific integrated circuits; CMOS process; CMOS technology; Design automation; Design methodology; Hardware; Random access memory; Read-write memory; Research and development; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC Conference and Exhibit, 1992., Proceedings of Fifth Annual IEEE International

Conference_Location

Rochester, NY

Print_ISBN

0-7803-0768-2

Type

conf

DOI

10.1109/ASIC.1992.270211

Filename

270211