Title :
Improvement of Endurance and Switching Stability of Forming-Free CuxO RRAM
Author :
Lv, H.B. ; Yin, Mei ; Zhou, Peng ; Tang, T.A. ; Ba-Chen ; Lin, Y.Y.
Author_Institution :
Sch. of Microelectron. & State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai
Abstract :
Cu-oxide grown by plasma oxidation is found typically composed of upper CuO layer and inner graded CuxO. The initial forming process leads to endurance degradation but can be improved by annealing in an oxygen deficient ambient. By using ramped pulse and verification algorithm, the endurance and programming voltage shift are further ameliorated.
Keywords :
annealing; copper compounds; forming processes; oxidation; random-access storage; switching circuits; CuxO RRAM; annealing; forming process; plasma oxidation; switching stability; Application specific integrated circuits; Breakdown voltage; CMOS process; Degradation; Microelectronics; Oxidation; Plasma measurements; Random access memory; Semiconductor device manufacture; Stability;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2008 and 2008 International Conference on Memory Technology and Design. NVSMW/ICMTD 2008. Joint
Conference_Location :
Opio
Print_ISBN :
978-1-4244-1546-5
Electronic_ISBN :
978-1-4244-1547-2
DOI :
10.1109/NVSMW.2008.21
