A novel consistent gate-charge model of GaAs MESFETs for the design of Ku-band power amplifiers

Author

Zhong, Zheng ; Guo, Yongxin ; Leong, Mook Seng

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore

fYear

2011

Firstpage

295

Lastpage

298

Abstract

In this paper, a novel consistent gate charge model for GaAs MESFETs based upon charge conservation is proposed. This new model is capable of accurately modeling the transistor under various biasing conditions. Moreover, the performance prediction in the linear region, saturation knee region and sub-threshold region is greatly improved. Measured and modeled results of a 2×150μm GaAs MESFET are compared and good agreement has been obtained. In addition, a Ku-band power amplifier was designed with the new model for the verification of its nonlinear properties.

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; power amplifiers; GaAs; K_u-band power amplifiers; MESFET; biasing conditions; charge conservation; consistent gate-charge model; linear region; nonlinear properties; performance prediction; saturation knee region; subthreshold region; Gallium arsenide; Integrated circuit modeling; Logic gates; MESFETs; Mathematical model; Power amplifiers; Solid modeling; GaAs MESFETs; Gate-charge Model; Large-signal Model;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2011 Asia-Pacific

Conference_Location

Melbourne, VIC

Print_ISBN

978-1-4577-2034-5

Type

conf

Filename

6173744