Title :
Design and implementation of high power, high linearity stacked RF FET switches in a 250 nm silicon on sapphire process
Author :
Pourakbar, Mohammadreza ; Redouté, Jean-Michel ; Faulkner, Michael
Author_Institution :
Centre for Telecommun. & Micro-Electron. (CTME), Victoria Univ., Melbourne, VIC, Australia
Abstract :
The RF circuitry in new generation mobile handsets is continuously becoming smaller while containing more functionality. Silicon-on-sapphire (SOS) technology is an advanced active device process that eases the fabrication of advanced wireless components on very high resistivity substrates. This paper presents the basic theory and resulting trade-offs regarding RF FET switches in order to achieve a high power handling capability, low insertion loss and high linearity of the latter. A combined RF switch consisting of eight stacked FETs, used in a high power switched capacitor banks, is designed with an insertion loss of 1 dB at 2 GHz for a transmitter power of 39.5 dBm. The presented configuration has a high linearity featuring P1dB and IIP3 of 49.2 dBm and 54.3 dBm, respectively.
Keywords :
UHF field effect transistors; radio transmitters; sapphire; silicon; switched capacitor networks; RF circuitry; SOS technology; Si-Al2O3; frequency 2 GHz; high linearity RF FET switches; high power RF FET switches; high power switched capacitor banks; loss 1 dB; silicon-on-sapphire; size 250 nm; stacked RF FET switches; transmitter power; wireless components; FETs; Insertion loss; Linearity; Logic gates; Radio frequency; Switches; Integrated circuit design; high power; radio frequency (RF); silicon-on-sapphire; switch; switched-capacitor bank;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2011 Asia-Pacific
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4577-2034-5
