• DocumentCode
    1606814
  • Title

    Influence and Comparison of Cu and Alu Metallization Schemes on Endurance of Embedded Flash Memories

  • Author

    Tempel, G. ; Erler, F. ; Fruehauf, J. ; Pantfoerder, J. ; Schaedler, K. ; Schulte, S.

  • Author_Institution
    IFD Technol. Center, Infineon Technol., Dresden
  • fYear
    2008
  • Firstpage
    87
  • Lastpage
    89
  • Abstract
    The hydrogen budget and the permeability of the deposition layers in the metallization layers of flash memories determine the program / erase performance of these cells. In general these layers must be optimized together to get the best endurance.
  • Keywords
    embedded systems; flash memories; integrated circuit metallisation; deposition layers; embedded flash memory; metallization schemes; permeability; program/erase performance; Flash memory; Gases; Hydrogen; Metallization; Permeability; Plasma materials processing; Plasma measurements; Plasma temperature; Semiconductor films; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Semiconductor Memory Workshop, 2008 and 2008 International Conference on Memory Technology and Design. NVSMW/ICMTD 2008. Joint
  • Conference_Location
    Opio
  • Print_ISBN
    978-1-4244-1546-5
  • Electronic_ISBN
    978-1-4244-1547-2
  • Type

    conf

  • DOI
    10.1109/NVSMW.2008.31
  • Filename
    4531831
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1606814