Title :
Design and modelling of a double gate bilayer graphene field effect transistor
Author :
Islam, Md Saiful ; Kouzani, Abbas Z.
Author_Institution :
Sch. of Eng., Deakin Univ., Geelong, VIC, Australia
Abstract :
This paper presents design and computational investigation of a double gate bilayer graphene field effect transistor (GFET) based on the self consistent solution of the Poisson, continuity and energy balance equations (PADRE). The investigation considers the quantum transport at the nanoscale dimension. A set of performance characteristics including charge distribution, bandgap energy, I-V characteristics, electrostatic potential distribution, on/off current ratio and transconductance are considered. In addition, the behavior of the GFET is compared against that of the conventional Si-FET. Owing to its high carrier mobility and saturation velocity, the GFET shows improved performance characteristics over the Si-FET.
Keywords :
Poisson equation; elemental semiconductors; field effect transistors; graphene; semiconductor device models; silicon; C; PADRE; Poisson self consistent solution; Si; charge distribution; continuity balance equations; double GFET; double gate bilayer graphene field effect transistor; double gate bilayer graphene field effect transistor design; electrostatic potential distribution; energy balance equations; high carrier mobility; nanoscale dimension; quantum transport; saturation velocity; transconductance; Equations; FETs; Logic gates; Mathematical model; Performance evaluation; Photonic band gap; Transconductance; Graphene field effect transistor; energy balance equation (PADRE); mobility; quantum transport;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2011 Asia-Pacific
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4577-2034-5
