Electrical properties of VO2 thin films grown by PLD

A set of electronic instrumentation was configured to perform measurements of resistivity and Hall coefficient based on the four-point van der Pauw technique. Measurements were performed on silicon wafer and vanadium dioxide thin films. The abrupt change in resistivity at the critical semiconductor to metal transition temperature, by up to five orders of magnitude, was verified for VO2 thin films grown by pulsed laser deposition on sapphire substrate, and lower for films grown on MgO on glass substrates. For the sample grown on sapphire other transport properties for, obtained through Hall effect measurements, were obtained.