DocumentCode
1607107
Title
TF004 - interfacing complex oxides to gallium nitride
Author
Losego, M.D. ; Craft, H.S. ; Mita, S. ; Rice, T. ; Collazo, R. ; Sitar, Z. ; Maria, J-P.
Author_Institution
Department of Materials Science and Engineering, North Carolina State University, Research Building 1, 1001 Capability Drive, Raleigh, 27606 USA
Volume
3
fYear
2008
Firstpage
1
Lastpage
2
Abstract
Integration of functional complex oxides with gallium nitride is attractive for advanced device architectures including smart FETs and high-temperature electronics. Inclusion of large bandgap interfacial oxide layers are of interest for band line-up compatibility. This presentation reviews work on the epitaxial growth of large bandgap rocksalt oxide buffer layers including MgO and CaO by molecular beam epitaxy. It also discusses the epitaxial deposition of ferroelectric oxides by rf magnetron sputtering.
Keywords
Binary search trees; FETs; Ferroelectric materials; Gallium nitride; III-V semiconductor materials; Molecular beam epitaxial growth; Monitoring; Photonic band gap; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
Conference_Location
Santa Re, NM, USA
ISSN
1099-4734
Print_ISBN
978-1-4244-2744-4
Electronic_ISBN
1099-4734
Type
conf
DOI
10.1109/ISAF.2008.4693846
Filename
4693846
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