• DocumentCode
    1607142
  • Title

    A tutorial on GaAs vs silicon

  • Author

    Yung, Y.S.

  • Author_Institution
    Nat. Semicond., Santa Clara, CA, USA
  • fYear
    1992
  • Firstpage
    281
  • Lastpage
    287
  • Abstract
    The physical properties of GaAs and silicon are described, and the advantages and disadvantages of GaAs over silicon in terms of physics are reported. The implications of physical properties and circuit techniques for computing and communication applications are addressed in terms of ASICs
  • Keywords
    III-V semiconductors; application specific integrated circuits; elemental semiconductors; gallium arsenide; silicon; ASICs; GaAs; Si; circuit techniques; physical properties; Application specific integrated circuits; Charge carrier processes; Electron mobility; Gallium arsenide; HEMTs; Phonons; Photonic band gap; Silicon; Thermal conductivity; Tutorial;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC Conference and Exhibit, 1992., Proceedings of Fifth Annual IEEE International
  • Conference_Location
    Rochester, NY
  • Print_ISBN
    0-7803-0768-2
  • Type

    conf

  • DOI
    10.1109/ASIC.1992.270234
  • Filename
    270234
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1607142