Title :
A tutorial on GaAs vs silicon
Author_Institution :
Nat. Semicond., Santa Clara, CA, USA
Abstract :
The physical properties of GaAs and silicon are described, and the advantages and disadvantages of GaAs over silicon in terms of physics are reported. The implications of physical properties and circuit techniques for computing and communication applications are addressed in terms of ASICs
Keywords :
III-V semiconductors; application specific integrated circuits; elemental semiconductors; gallium arsenide; silicon; ASICs; GaAs; Si; circuit techniques; physical properties; Application specific integrated circuits; Charge carrier processes; Electron mobility; Gallium arsenide; HEMTs; Phonons; Photonic band gap; Silicon; Thermal conductivity; Tutorial;
Conference_Titel :
ASIC Conference and Exhibit, 1992., Proceedings of Fifth Annual IEEE International
Conference_Location :
Rochester, NY
Print_ISBN :
0-7803-0768-2
DOI :
10.1109/ASIC.1992.270234
