Title :
Highly-sensitive 2DEG-Hall device made of pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.8/Ga/sub 0.2/As heterostructure
Author :
Sugiyama, Y. ; Takeuchi, Y. ; Tacano, M.
Author_Institution :
Electrotech. Lab., Tsukuba, Japan
Abstract :
An integrable and sensitive InGaAs-2DEG Hall device with a low temperature coefficient was fabricated by the pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.8/Ga/sub 0.2/As heterostructure which had an electron mobility of 16000 cm/sup 2//Vs. The product sensitivity of this Hall device was as large as 320 V/AT with a temperature coefficient of -0.035%/ degrees C and a low noise voltage of -110 dBV/ square root Hz at 1.5 V and 1 Hz. The magnetic sensitivity, four times as large as that of an epitaxial GaAs Hall device, increased in linear proportion to the drive current up to 40 mA, and the maximum sensitivity of 15 V/T was obtained without any amplification. A very high signal-to-noise ratio magnetic sensor an be realized.<>
Keywords :
Hall effect transducers; III-V semiconductors; aluminium compounds; electric sensing devices; gallium arsenide; indium compounds; magnetic field measurement; quantum Hall effect; semiconductor epitaxial layers; semiconductor superlattices; 2D electron gas Hall device; III-V semiconductor; In/sub 0.52/Al/sub 0.48/As-In/sub 0.8/Ga/sub 0.2/As heterostructure; high signal-to-noise ratio magnetic sensor; integrable; low noise voltage; low temperature coefficient; magnetic sensitivity; product sensitivity; pseudomorphic heterostructure; Electron mobility; Gallium arsenide; Indium phosphide; Laboratories; Magnetic devices; Magnetic field measurement; Magnetic sensors; Molecular beam epitaxial growth; Substrates; Temperature sensors;
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
DOI :
10.1109/SENSOR.1991.149080
