Highly-sensitive 2DEG-Hall device made of pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.8/Ga/sub 0.2/As heterostructure

An integrable and sensitive InGaAs-2DEG Hall device with a low temperature coefficient was fabricated by the pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.8/Ga/sub 0.2/As heterostructure which had an electron mobility of 16000 cm/sup 2//Vs. The product sensitivity of this Hall device was as large as 320 V/AT with a temperature coefficient of -0.035%/ degrees C and a low noise voltage of -110 dBV/ square root Hz at 1.5 V and 1 Hz. The magnetic sensitivity, four times as large as that of an epitaxial GaAs Hall device, increased in linear proportion to the drive current up to 40 mA, and the maximum sensitivity of 15 V/T was obtained without any amplification. A very high signal-to-noise ratio magnetic sensor an be realized.<>