Synthesis and characterization of boron nitride films obtained by chemical vapor deposition

The boron nitride nanostructures are materials very important in engineering applications, which include the strengthening of lighter structural materials. Using borazine (B3N3H6) as a precursor also using the technique of chemical vapor deposition and maintaining the temperature of the heater at 800oC for 30 minutes the boron nitride films were deposited on silicon substrates. Their morphology was examined by scanning electron microscope and transmission electron microscopy, while its chemical composition was studied by techniques scanning electron microscopy energy dispersive, Fourier transform infrared spectrometry, electron energy loss spectroscopy and, X-ray photoelectron spectroscopy. These results indicated that the material that was obtained is BN with hexagonal structure and atomic ratio of boron to nitrogen from 1:1