DocumentCode :
1607578
Title :
TF022 - grain size effects of A:B site ratio in BaTiO3 thin films
Author :
Daniels, P.R. ; Aygun, S. ; Ihlefeld, J.F. ; Borland, W. ; Maria, J-P.
Author_Institution :
Department of Materials Science and Engineering, North Carolina State University, Raleigh, 27606 USA
Volume :
3
fYear :
2008
Firstpage :
1
Lastpage :
2
Abstract :
BaTiO3 films with thickness ~1 micron were deposited on Pt and Cu foil substrates via a CSD process with varying A:B site ratios and were fired at temperatures ranging from 900 to 1200??C. The intent of this study is to determine the impact of A:B site ratio on phase assembly, grain growth, morphology, and film density. Films with excess Barium, up to 5%, fired at and above 1000??C exhibited grain sizes exceeding 5 microns with uniform and isotropic morphology. Films with excess Barium showed no formation of a secondary phase via XRD at 1100??C but a secondary phase was present at 1200??C with barium excess exceeding 4%. For films with large Ba excess and grain sizes in excess of 1 ??m there is no evidence of tetragonality. Electrical testing as a function of voltage and temperature revealed room temperature permittivities of 4000 and tunability greater than 13:1 at 35V applied bias for Ba excess of 3%. Though more thorough research is needed, these results suggest that tuning the Ba:Ti ratio presents possibilities for dielectric property engineering in BaTiO3.
Keywords :
Assembly; Barium; Grain size; Morphology; Substrates; Temperature distribution; Testing; Transistors; Voltage; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
Conference_Location :
Santa Re, NM, USA
ISSN :
1099-4734
Print_ISBN :
978-1-4244-2744-4
Electronic_ISBN :
1099-4734
Type :
conf
DOI :
10.1109/ISAF.2008.4693862
Filename :
4693862
Link To Document :
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