Title :
High sensitive thin film InAs Hall element by MBE (for magnetic sensors)
Author :
Shibasaki, I. ; Kanayama, Y. ; Nagase, K. ; Ito, T. ; Ichimori, F. ; Yoshida, T. ; Harada, K.
Author_Institution :
Asahi Chem. Ind. Co. Ltd., Fuji, Japan
Abstract :
A new type of high-sensitivity InAs Hall element has been developed using MBE. First, InAs thin films are grown on SI GaAs substrate by an MBE system with a multi-substrate holder. This InAs thin film is then processed into a Hall element by a wafer process (wet plating, ion-milling, etc.) specially developed for this purpose, and the standard assembling process, involving wire bonding, transfer molding by epoxy resin, etc. This Hall element has a high output voltage, a wide range of operating temperatures, and high reliability.<>
Keywords :
Hall effect transducers; III-V semiconductors; electric sensing devices; indium compounds; magnetic field measurement; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; GaAs substrate; Hall element; III-V semiconductors; InAs thin films; InAs:Si; MBE; high output voltage; high reliability; high-sensitivity; ion-milling; magnetic sensors; multi-substrate holder; transfer molding; wet plating; wire bonding; Assembly; Gallium arsenide; Magnetic films; Molecular beam epitaxial growth; Semiconductor thin films; Standards development; Substrates; Transistors; Wafer bonding; Wire;
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
DOI :
10.1109/SENSOR.1991.149082
