DocumentCode
1607955
Title
A new fabrication technique for 2.75 GHz ZnO-based FBAR devices
Author
Mai, Linh ; Lee, Jae-young ; Pham, Van-Su ; Yoon, Giwan
Author_Institution
Communication and Electronics Laboratory, School of Engineering, Information and Communications University (ICU), 119 Munjiro, Yuseong-gu, Daejeon 305-732, Korea
Volume
3
fYear
2008
Firstpage
1
Lastpage
2
Abstract
We for the first time present a new fabrication technique of ZnO-based FBAR devices using a multi-layered Bragg reflector. To improve the resonance performance, 0.03??m-thick chromium (Cr)-adhesion layers were inserted into the Bragg reflector and also thermal treatments were made to the devices. At operating frequency of about 2.75 GHz, very high return loss values and quality factor (Q) were observed under an optimum thermal annealing condition.
Keywords
Adhesives; Annealing; Chromium; Electrodes; Fabrication; Film bulk acoustic resonators; Q factor; Resonance; Sputtering; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
Conference_Location
Santa Re, NM, USA
ISSN
1099-4734
Print_ISBN
978-1-4244-2744-4
Electronic_ISBN
1099-4734
Type
conf
DOI
10.1109/ISAF.2008.4693878
Filename
4693878
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