Title :
Full integration and cell characteristics for 64Mb nonvolatile PRAM
Author :
Lee, S.-H. ; Hwang, Y.N. ; Lee, S.Y. ; Ryoo, K.C. ; Ahn, S.J. ; Koo, Hyun Cheol ; Jeong, C.W. ; Kim, Kinam ; Koh, G.H. ; Jeong, G.T. ; Jeong, H.S. ; Kinam Kim
Author_Institution :
Adv. Technol. Dev., Samsung Electron. Co. Ltd., Kyunggi-Do, South Korea
Abstract :
We have integrated a 64Mb nonvolatile random access memory using phase transition phenomena. Based on 0.18μm-CMOS technologies, the vertical contact typed memory cell is fabricated. The device density can be sharply increased with decreasing the writing current and the GST size. But for reduction of writing current, issues including set and interface resistances should be stabilized. Additionally, our results also show the feasibility of 256Mb nonvolatile PRAM with writing time below 100ns.
Keywords :
CMOS integrated circuits; random-access storage; 0.18 micron; 0.18μm-CMOS technologies; 100 ns; 256 Mbit; 64 Mbit; 64Mb nonvolatile PRAM; cell characteristics; full integration characteristics; nonvolatile random access memory; phase transition phenomena; CMOS technology; Circuit testing; Computer aided engineering; Costs; Crystallization; Driver circuits; Electrodes; Nonvolatile memory; Phase change random access memory; Writing;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345369
